Whether you are in need of military aviation parts, NSN components, or various forms of aerospace and defense parts, Aerospace Store is a single-sourcing solution with over 2 billion product listings readily available for purchase at any time with competitive pricing. You have reached the Request for Quote (RFQ) page for part number SM-A-959137, a Advanced Micro Devices Inc component we feature that is listed with the NSN 5962011887173 and item name “Microcircuit Memory.” For further identification, part number SM-A-959137 was also specifically produced under CAGE Code 34335 and belongs to Federal Supply Class (FSC) 5962 Microcircuits Electronic. If you would like to receive specific options for procurement that have been tailored to your unique needs and restrictions alike, we ask that you please fill out and submit the form provided on this page with as much information as you can. Once our team has a chance to receive and review your offered details, a dedicated account manager will be in touch shortly after.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-188-7173 Item Description: Microcircuit Memory | 5962 | 011887173 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | isc | rnvc | rncc | HCC | MSDS | SADC |
| Sm-A-959137 | 3 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH50 2 MILLIMETERS MINIMUM AND 51 3 MILLIMETERS MAXIMUM |
| MEMORY | ADAT | BODY WIDTH14 8 MILLIMETERS MINIMUM AND 15 6 MILLIMETERS MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT2 0 MILLIMETERS MINIMUM AND 2 6 MILLIMETERS MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 5 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | AGAV | END ITEM IDENTIFICATION5820-01-145-4902 MODEMCABLE DRI |
| MEMORY | CBBL | FEATURES PROVIDEDBURN IN MIL-STD-883 CLASS B AND HERMETICALLY SEALED AND MONOLITHIC AND STATIC OPERATION AND ELECTROSTATIC SENSITIVE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMMETAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN37 INPUT |
| MEMORY | CRHL | BIT QUANTITY2048 |
| MEMORY | CSWJ | WORD QUANTITY256 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 0 VOLTS NOMINAL POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC400 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 400 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT |
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