Whether you are in need of military aviation parts, NSN components, or various forms of aerospace and defense parts, Aerospace Store is a single-sourcing solution with over 2 billion product listings readily available for purchase at any time with competitive pricing. You have reached the Request for Quote (RFQ) page for part number U18-0032, a Microsemi Corp Massachusetts component we feature that is listed with the NSN 5961013014830 and item name “Semiconductor Device Set.” For further identification, part number U18-0032 was also specifically produced under CAGE Code 50101 and belongs to Federal Supply Class (FSC) 5961 Semiconductor Devices and Associated Hardware. If you would like to receive specific options for procurement that have been tailored to your unique needs and restrictions alike, we ask that you please fill out and submit the form provided on this page with as much information as you can. Once our team has a chance to receive and review your offered details, a dedicated account manager will be in touch shortly after.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-301-4830 Item Description: Semiconductor Device Set | 5961 | 013014830 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | ||||
Part Number | isc | rnvc | rncc | HCC | MSDS | SADC |
U18-0032 | 5 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | GLASS ALL SEMICONDUCTOR DEVICE DIODE |
ABHP | OVERALL LENGTH | 0.175 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
ADAV | OVERALL DIAMETER | 0.075 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
AFZC | FUNCTION FOR WHICH DESIGNED | VOLTAGE VARIABLE CAPACITOR |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 ALL SEMICONDUCTOR DEVICE DIODE |
ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
ASKA | COMPONENT NAME AND QUANTITY | 12 SEMICONDUCTOR DEVICE DIODE |
AXGY | MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
CBBL | FEATURES PROVIDED | BURN IN AND HERMETICALLY SEALED CASE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 28.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET ALL SEMICONDUCTOR DEVICE DIODE |
CTRD | POWER RATING PER CHARACTERISTIC | 200.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE |
CTRG | CAPACITANCE RATING IN PICOFARADS | 5.0 MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
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