Whether you are in need of military aviation parts, NSN components, or various forms of aerospace and defense parts, Aerospace Store is a single-sourcing solution with over 2 billion product listings readily available for purchase at any time with competitive pricing. You have reached the Request for Quote (RFQ) page for part number K6T1008C2EDB7000, a Samsung Semiconductor component we feature that is listed with the NSN 5962014082869 and item name “Microcircuit Memory.” For further identification, part number K6T1008C2EDB7000 was also specifically produced under CAGE Code 0DUN9 and belongs to Federal Supply Class (FSC) 5962 Microcircuits Electronic. If you would like to receive specific options for procurement that have been tailored to your unique needs and restrictions alike, we ask that you please fill out and submit the form provided on this page with as much information as you can. Once our team has a chance to receive and review your offered details, a dedicated account manager will be in touch shortly after.
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Items like part number K6T1008C2EDB7000 and others are all readily available with short lead times, and we boast rigorous quality-assurance practices to guarantee the caliber and reliability of every purchase made on our website. Beyond quality, we are fully committed to customer satisfaction, regularly exceeding industry expectations to ensure that we thoroughly and efficiently address every need. If you happen to be facing a time constraint that demands more specialized fulfillment solutions, please give us a call or email at any time to discuss the options we can provide. We are available around the clock and are always happy to assist, so do not hesitate to reach out for part number K6T1008C2EDB7000 and other various items of interest.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-408-2869 Item Description: Microcircuit Memory | 5962 | 014082869 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | A | 0 | ||||
| Part Number | isc | rnvc | rncc | HCC | MSDS | SADC |
| K6t1008c2edb7000 | 5 | 2 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | REMOTE TERMINAL UNIT |
| CBBL | FEATURES PROVIDED | 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | PLASTIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQZP | INPUT CIRCUIT PATTERN | 8 INPUT |
| CSWJ | WORD QUANTITY (NON-CORE) | 131072 |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS STATIC RAM |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| FEAT | SPECIAL FEATURES | 128K-WORD X 8-BIT CAPACITY; 70 NS ACCESS TIME; DIRECT TTL COMPATIBILITY; BATTERY BACK-UP OPERATION CAPABILITY |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 FLAT LEADS |
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