Whether you are in need of military aviation parts, NSN components, or various forms of aerospace and defense parts, Aerospace Store is a single-sourcing solution with over 2 billion product listings readily available for purchase at any time with competitive pricing. You have reached the Request for Quote (RFQ) page for part number BAS21SLT1G, a Semiconductor Components Industr component we feature that is listed with the NSN 5961016336335 and item name “Semiconductor Devices Unitized.” For further identification, part number BAS21SLT1G was also specifically produced under CAGE Code 1MQ07 and belongs to Federal Supply Class (FSC) 5961 Semiconductor Devices and Associated Hardware. If you would like to receive specific options for procurement that have been tailored to your unique needs and restrictions alike, we ask that you please fill out and submit the form provided on this page with as much information as you can. Once our team has a chance to receive and review your offered details, a dedicated account manager will be in touch shortly after.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-633-6335 Item Description: Semiconductor Devices Unitized | 5961 | 016336335 | 0 | N | A | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | A | A | 0 | |||
Part Number | isc | rnvc | rncc | HCC | MSDS | SADC |
Bas21slt1g | 5 | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
MRC | Decoded Requirement | Clear Text Reply |
CTQX | Current Rating Per Characteristic | 225.0 MILLIAMPERES NOMINAL FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE 1ST SEMICONDUCTOR DEVICE DIODE |
CTRD | Power Rating Per Characteristic | 225.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION 2ND SEMICONDUCTOR DEVICE DIODE |
CTRD | Power Rating Per Characteristic | 225.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION 3RD SEMICONDUCTOR DEVICE DIODE |
CTQX | Current Rating Per Characteristic | 225.0 MILLIAMPERES NOMINAL FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE 2ND SEMICONDUCTOR DEVICE DIODE |
CTRD | Power Rating Per Characteristic | 225.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION 1ST SEMICONDUCTOR DEVICE DIODE |
CTQX | Current Rating Per Characteristic | 225.0 MILLIAMPERES NOMINAL FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE 3RD SEMICONDUCTOR DEVICE DIODE |
ASKA | Component Name And Quantity | 3 SEMICONDUCTOR DEVICE DIODE |
CXCY | Part Name Assigned By Controlling Agency | DUAL SERIES HIGH VOLTAGE SWITCHING DIODE |
TTQY | Terminal Type And Quantity | 3 BONDING PAD |
ABHP | Overall Length | 0.114 INCHES NOMINAL |
CTQN | Voltage Rating In Volts Per Characteristic | 250.0 NOMINAL REVERSE VOLTAGE, PEAK 1ST SEMICONDUCTOR DEVICE DIODE |
AXGY | Mounting Method | TERMINAL |
CTQN | Voltage Rating In Volts Per Characteristic | 250.0 NOMINAL REVERSE VOLTAGE, PEAK 3RD SEMICONDUCTOR DEVICE DIODE |
CTQN | Voltage Rating In Volts Per Characteristic | 250.0 NOMINAL REVERSE VOLTAGE, PEAK 2ND SEMICONDUCTOR DEVICE DIODE |
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