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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-341-2450 Item Description: Microcircuit Memory | 5962 | 013412450 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | isc | rnvc | rncc | HCC | MSDS | SADC |
| Tms4256-12nl | 2 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | CQZP | INPUT CIRCUIT PATTERN13 INPUT |
| MEMORY | CRHL | BIT QUANTITY262144 |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | ABKW | OVERALL HEIGHT0 400 INCHES MAXIMUM |
| MEMORY | ADAQ | BODY LENGTH0 840 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | CBBL | FEATURES PROVIDEDDYNAMIC AND MONOLITHIC AND WCLOCK AND WBUFFERED OUTPUT |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC90 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYDYNAMIC RANDOM ACCESS MEMORY |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-1 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | ZZZK | SPECIFICATIONSTANDARD DATA81349-MIL-M-38510246 GOVERNMENT SPECIFICATION |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC60 00 NANOSECONDS MINIMUM ACCESS AND 120 00 NANOSECONDS MAXIMUM ACCESS |
| MEMORY | TEST | TEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI |
| MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CSWJ | WORD QUANTITY262144 |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0110 0 DEG CELSIUS |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTICERR-060 MAXIMUM AND ERR-060 MAXIMUM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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